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SUD50N06-08H
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
100
V GS = 10 V
I D = 20 A
1.7
T J = 150 °C
1.4
1.1
0.8
10
T J = 25 °C
0.5
- 50
- 25
0 25 50 75 100 125
150
175
1
0
0.3 0.6 0.9
1.2
T J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
THERMAL RATINGS
125
1000
V SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
100
100
*Limited by r DS(on)
10 μs
100 μs
75
50
10
1 ms
10 ms
100 ms
25
Limited by
Package
1
T C = 25 °C
Single Pulse
dc
0
0
25
50 75 100 125
T C - Case Temperature (°C)
150
175
0.1
0.1
1 10 100
V DS - Drain-to-Source Voltage (V)
*V GS > minimum V GS at which r DS(on) is specified
2
Maximum Avalanche Drain Current
vs. Case Temperature
Safe Operating Area
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73160.
www.vishay.com
4
Document Number: 73160
S-71661-Rev. B, 06-Aug-07
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